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PS7801F-1A
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Diode
MOS FET
Forward Voltage
Reverse Current
Off-state Leakage
V F
I R
I Loff
I F = 5 mA
V R = 5 V
V D = 45 V
1.1
0.02
1.4
5.0
1.0
V
μ A
nA
Current
Output Capacitance
C out
V D = 0 V, f = 1 MHz
0.9
1.5
pF
Coupled
LED On-state Current
I Fon
I L = 130 mA
2.0
mA
On-state Resistance
R on
I F = 5 mA, I L = 130 mA
9.5
14
Ω
Turn-on Time
Turn-off Time
*1, 2
*1, 2
t on
t off
I F = 5 mA, V O = 5 V, R L = 500 Ω ,
PW ≥ 10 ms
0.03
0.05
0.5
0.5
ms
Isolation Resistance
Isolation Capacitance
R I-O
C I-O
V I-O = 0.5 kV DC
V = 0 V, f = 1 MHz
10
9
0.3
Ω
pF
*1 Test Circuit for Switching Time
I F
Pulse Input
V L
Input
50%
0
Input monitor
V O monitor
V O = 5 V
90%
Output
R in
R L
t on
t off
10%
*2 The turn-on time and turn-off time are specified as input-pulse width ≥ 10 ms.
Be aware that when the device operates with an input-pulse width less than 10 ms, the turn-on time and turn-off
time will increase.
4
Data Sheet PN10738EJ01V0DS
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